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RJK2508DPK
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0508-0200 Rev.2.00 Feb.10.2005
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
PRSS0004ZE-A (Previous code: TO-3P)
D
G
1. Gate 2. Drain (Flange) 3. Source
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
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Item
Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.
RJK2508DPK Datasheet
