RQK0604IGDQA Description
RQK0604IGDQA Silicon N Channel MOS FET Power Switching.
RQK0604IGDQA Key Features
- Low on-resistance RDS(on) = 111 mΩ typ.(at VGS = 4.5 V, ID = 1 A)
- Low drive current
- High speed switching
- VDSS ≥ 60 V and capable of 2.5 V gate drive