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RU1H100 - N-Channel Advanced Power MOSFET

Description

TO-220 TO-220F TO-247 TO-263 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Curren

Features

  • 100V/75A RDS (ON)=11mΩ(Typ. ) @ VGS=10V.
  • Ultra Low On-Resistance.
  • Extremely high dv/dt capability.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.

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Datasheet Details

Part number RU1H100
Manufacturer Ruichips
File Size 440.44 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU1H100 Datasheet
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Full PDF Text Transcription

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RU1H100 N-Channel Advanced Power MOSFET Features • 100V/75A RDS (ON)=11mΩ(Typ.
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