RU1H130Q - N-Channel Advanced Power MOSFET

Description

G D S TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① I

Features

100V/130A, RDS (ON) =7mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

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Datasheet Details

Part number	RU1H130Q
Manufacturer	Ruichips
File Size	277.55 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU1H130Q Datasheet
Additional preview pages of the RU1H130Q datasheet.

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Full PDF Text Transcription

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RU1H130Q N-Channel Advanced Power MOSFET Features •100V/130A, RDS (ON) =7mΩ(Typ.

Published: Apr 25, 2016 |