RU1H130R Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU1H130R n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU1H130R
Manufacturer	Ruichips
File Size	306.18 KB
Description	N-Channel Advanced Power MOSFET
Download	RU1H130R Download (PDF)

General Description

Applications • High Efficiency Synchronous Rectification in SMPS • High Speed Power Switching Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev.

B– MAR., 2013 1 GD S TO220 D G S N-Chann

Overview

RU1H130R N-Channel Advanced Power MOSFET.

Key Features

100V/130A, RDS (ON) =7mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

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