RU1H190S mosfet equivalent, n-channel advanced power mosfet.
* 100V/190A, RDS (ON) =5mΩ (Type) @ VGS=10V,IDS=80A
* Ultra Low On-Resistance
* Exceptional dv/dt capability
* Fast Switching and Fully Avalanche Rated
* Switching Application Systems
Pin Description
TO-220 TO-263
TO-220F TO-247
N-Channel MOSFET
Absolute Maximum .
TO-220 TO-263
TO-220F TO-247
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temp.
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