RU1H190S Datasheet PDF (N-Channel Advanced Power MOSFET)

RU1H190S - N-Channel Advanced Power MOSFET

Description

TO-220 TO-263 TO-220F TO-247 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current

Features

100V/190A, RDS (ON) =5mΩ (Type) @ VGS=10V,IDS=80A.
Ultra Low On-Resistance.
Exceptional dv/dt capability.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Available.

Datasheet Details

Part number	RU1H190S
Manufacturer	Ruichips
File Size	405.41 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU1H190S Datasheet
Additional preview pages of the RU1H190S datasheet.

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Full PDF Text Transcription

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RU1H190S N-Channel Advanced Power MOSFET MOSFET Features • 100V/190A, RDS (ON) =5mΩ (Type) @ VGS=10V,IDS=80A • Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Available Applications • Switching Application Systems Pin Description TO-220 TO-263 TO-220F TO-247 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Re

Published: Apr 25, 2016 |