RU1H300Q - N-Channel Advanced Power MOSFET

Description

G DS TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① ID

Features

100V/300A, RDS (ON) =3mΩ(Typ. )@VGS=10V.
Ultra Low On-Resistance.
Exceptional dv/dt capability.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

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Datasheet Details

Part number	RU1H300Q
Manufacturer	Ruichips
File Size	276.92 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU1H300Q Datasheet
Additional preview pages of the RU1H300Q datasheet.

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Full PDF Text Transcription

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RU1H300Q N-Channel Advanced Power MOSFET Features • 100V/300A, RDS (ON) =3mΩ(Typ.

Published: Apr 25, 2016 |