RU1H35K - N-Channel Advanced Power MOSFET

Description

Applications High Speed Power Switching GDS TO251 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuou

Features

100V/40A, RDS (ON) =21mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

Ruichips

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Datasheet Details

Part number	RU1H35K
Manufacturer	Ruichips
File Size	267.39 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU1H35K Datasheet
Additional preview pages of the RU1H35K datasheet.

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RU1H35K N-Channel Advanced Power MOSFET Features • 100V/40A, RDS (ON) =21mΩ(Typ.

Published: Apr 25, 2016 |