RU1H35Q Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU1H35Q n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU1H35Q
Manufacturer	Ruichips
File Size	283.99 KB
Description	N-Channel Advanced Power MOSFET
Download	RU1H35Q Download (PDF)

General Description

TO-247 Applications •Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

B– SEP., 2011 Rating 100 ±25 175 -55 to 175 40 ① 160 ② 40 27 111 56 1.35 Unit V

Overview

RU1H35Q N-Channel Advanced Power MOSFET MOSFET.

Key Features

100V/40A, RDS (ON) =21mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

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