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RU1H36R Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU1H36R
Manufacturer Ruichips
File Size 287.37 KB
Description N-Channel Advanced Power MOSFET
Download RU1H36R Download (PDF)

General Description

TO-220 Applications • DC-DC Converters • Synchronous Rectifier N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– MAR., 2012 Rating 100 ±20 175 -55 to 175

Overview

RU1H36R N-Channel Advanced Power MOSFET MOSFET.

Key Features

  • 100V/32A, RDS (ON) =34mΩ(Typ. )@VGS=10V.
  • Super High Dense Cell Design.
  • Ultra Low On-Resistance.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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