RU1H40L Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU1H40L n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU1H40L
Manufacturer	Ruichips
File Size	288.18 KB
Description	N-Channel Advanced Power MOSFET
Download	RU1H40L Download (PDF)

General Description

TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconducto

Overview

RU1H40L N-Channel Advanced Power MOSFET MOSFET.

Key Features

100V/40A, RDS (ON) =22mΩ(Typ. )@VGS=10V RDS (ON) =28mΩ(Typ. )@VGS=4.5V.
Super High Dense Cell Design.
Fast Switching and Fully Avalanche Rated.
Reliable and Rugged.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

More Datasheets from Ruichips

Part Number	Description
RU1H100	N-Channel Advanced Power MOSFET
RU1H100R	N-Channel Advanced Power MOSFET
RU1H130Q	N-Channel Advanced Power MOSFET
RU1H130R	N-Channel Advanced Power MOSFET
RU1H130S	N-Channel Advanced Power MOSFET
RU1H150R	N-Channel Advanced Power MOSFET
RU1H190R	N-Channel Advanced Power MOSFET
RU1H190S	N-Channel Advanced Power MOSFET
RU1H300Q	N-Channel Advanced Power MOSFET
RU1H35K	N-Channel Advanced Power MOSFET