RU1H40L mosfet equivalent, n-channel advanced power mosfet.
* 100V/40A, RDS (ON) =22mΩ(Typ.)@VGS=10V RDS (ON) =28mΩ(Typ.)@VGS=4.5V
* Super High Dense Cell Design
* Fast Switching and Fully Avalanche Rated
* Reliabl.
* High Speed Power Switching.
Pin Description
TO252 N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
.
TO252 N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Co.
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