• Part: RU1H40L
  • Manufacturer: Ruichips
  • Size: 288.18 KB
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RU1H40L Key Features

  • 100V/40A, RDS (ON) =22mΩ(Typ.)@VGS=10V RDS (ON) =28mΩ(Typ.)@VGS=4.5V
  • Super High Dense Cell Design
  • Fast Switching and Fully Avalanche Rated
  • Reliable and Rugged
  • 100% avalanche tested
  • Lead Free and Green Devices Available (RoHS pliant)

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RU1H40L Description

TO252 N-Channel MOSFET Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC -Junction to Case Drain-Source Avalanche...