RU1H60R Overview
TO-220 N-Channel MOSFET Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC -Junction to Case Drain-Source...
RU1H60R Key Features
- 100V/60A, RDS (ON) =17 mΩ(Typ.)@VGS=10V RDS (ON) =18.5 mΩ(Typ.)@VGS=4.5V
- Super High Dense Cell Design
- Ultra Low On-Resistance
- 100% avalanche tested
- Lead Free and Green Devices Available (RoHS pliant)