Datasheet4U Logo Datasheet4U.com

RU1H60R - N-Channel Advanced Power MOSFET

Description

TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on La

Features

  • 100V/60A, RDS (ON) =17 mΩ(Typ. )@VGS=10V RDS (ON) =18.5 mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • Ultra Low On-Resistance.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

📥 Download Datasheet

Datasheet preview – RU1H60R

Datasheet Details

Part number RU1H60R
Manufacturer Ruichips
File Size 333.61 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU1H60R Datasheet
Additional preview pages of the RU1H60R datasheet.

📁 Similar Datasheet

Other Datasheets by Ruichips
  • RU1H100 - N-Channel Advanced Power MOSFET
  • RU1H100R - N-Channel Advanced Power MOSFET
  • RU1H130Q - N-Channel Advanced Power MOSFET
  • RU1H130R - N-Channel Advanced Power MOSFET
  • RU1H130S - N-Channel Advanced Power MOSFET
  • RU1H150R - N-Channel Advanced Power MOSFET
  • RU1H190R - N-Channel Advanced Power MOSFET
  • RU1H190S - N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
RU1H60R N-Channel Advanced Power MOSFET Features • 100V/60A, RDS (ON) =17 mΩ(Typ.)@VGS=10V RDS (ON) =18.5 mΩ(Typ.)@VGS=4.
Published: |