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RU1HC2H Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU1HC2H
Manufacturer Ruichips
File Size 349.99 KB
Description N-Channel Advanced Power MOSFET
Download RU1HC2H Download (PDF)

General Description

SOP-8 Absolute Maximum Ratings Complementary MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current (VGS=±10V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient N -Channel P Channel 100 ±20 150 -55 to 150 3.5 -100 ±20 150 -55 t

Overview

RU1HC2H Complementary Advanced Power MOSFET MOSFET.

Key Features

  • N-Channel 100V/3.5A, RDS (ON) =75mΩ (Typ. ) @ VGS=10V RDS (ON) =80mΩ (Typ. ) @ VGS=4.5V.
  • P-Channel -100V/-2.5A, RDS (ON) =155mΩ (Typ. ) @ VGS=-10V RDS (ON) =175mΩ (Typ. ) @ VGS=-4.5V.
  • Reliable and Rugged.
  • ESD Protected.
  • Lead Free and Green Available.

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