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RU1HE12L Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU1HE12L
Manufacturer Ruichips
File Size 282.96 KB
Description N-Channel Advanced Power MOSFET
Download RU1HE12L Download (PDF)

General Description

TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 100 ±20 175 -55 to 175 12 ① 48 ② 12 8 40 20 3.75 9 Unit V °

Overview

RU1HE12L N-Channel Advanced Power MOSFET MOSFET.

Key Features

  • 100V/12A, RDS (ON) =145mΩ(Typ. )@VGS=10V RDS (ON) =160mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • ESD protected.
  • Reliable and Rugged.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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