RU1HE12L Key Features
- 100V/12A, RDS (ON) =145mΩ(Typ.)@VGS=10V RDS (ON) =160mΩ(Typ.)@VGS=4.5V
- Super High Dense Cell Design
- ESD protected
- Reliable and Rugged
- 100% avalanche tested
- Lead Free and Green Devices Available (RoHS pliant)
- Part: RU1HE12L
- Manufacturer: Ruichips
- Size: 282.96 KB
Related Ruichips Datasheets
| Part Number | Description |
|---|---|
| RU1HE16L | N-Channel Advanced Power MOSFET |
| RU1HE3D | N-Channel Advanced Power MOSFET |
| RU1HE3H | N-Channel Advanced Power MOSFET |
| RU1HE4D | N-Channel Advanced Power MOSFET |
| RU1HE4H | N-Channel Advanced Power MOSFET |
RU1HE12L Description
TO252 N-Channel MOSFET Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large.