RU1HE12L mosfet equivalent, n-channel advanced power mosfet.
* 100V/12A, RDS (ON) =145mΩ(Typ.)@VGS=10V RDS (ON) =160mΩ(Typ.)@VGS=4.5V
* Super High Dense Cell Design
* ESD protected
* Reliable and Rugged
* 100% a.
* Converters
Pin Description
TO252
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (.
TO252
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode C.
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