RU1HE3D
RU1HE3D is N-Channel Advanced Power MOSFET manufactured by Ruichips.
Features
- 100V/3A, RDS (ON) =130mΩ (Typ.) @ VGS=10V RDS (ON) =140mΩ (Typ.) @ VGS=4.5V
- ESD Protected
- Reliable and Rugged
- Ultra Low On-Resistance
- 100% avalanche tested
- Lead Free and Green Available
Pin Description
SOT-223
Applications
- Power Management
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter mon Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
300μs Pulse Drain Current Tested
TC=25°C
Continuous Drain Current(VGS=10V)
TC=25°C
TC=70°C
②
RθJA
Maximum Power Dissipation
TC=25°C TC=70°C
Thermal Resistance-Junction to Ambient
Rating
100 ±20 150 -55 to...
