RU1HE3D - N-Channel Advanced Power MOSFET

Product Overview

Ruichips

Datasheet Details

Part number	RU1HE3D
Manufacturer	Ruichips
File Size	249.81 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU1HE3D Datasheet
Additional preview pages of the RU1HE3D datasheet.

Product details

Description

SOT-223 Applications Power Management N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TC=25°C ID Continuous Drain Current(VGS=10V) TC=25°C TC=70°C PD ② RθJA Maximum Power Dissipation

Features

100V/3A, RDS (ON) =130mΩ (Typ. ) @ VGS=10V RDS (ON) =140mΩ (Typ. ) @ VGS=4.5V.
ESD Protected.
Reliable and Rugged.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Available Pin.

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Published: Apr 10, 2017 |