Datasheet4U Logo Datasheet4U.com

RU1HE3H - N-Channel Advanced Power MOSFET

Description

SOP-8 Applications Converters LED Backlight Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range I

Features

  • 100V/3A, RDS (ON) =135mΩ (Typ. ) @ VGS=10V RDS (ON) =150mΩ (Typ. ) @ VGS=4.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • ESD Protected.
  • Lead Free and Green Available Pin.

📥 Download Datasheet

Datasheet Details

Part number RU1HE3H
Manufacturer Ruichips
File Size 275.86 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU1HE3H Datasheet

📁 Similar Datasheet

Other Datasheets by Ruichips
  • RU1HE3D - N-Channel Advanced Power MOSFET
  • RU1HE12L - N-Channel Advanced Power MOSFET
  • RU1HE16L - N-Channel Advanced Power MOSFET
  • RU1HE4D - N-Channel Advanced Power MOSFET
  • RU1HE4H - N-Channel Advanced Power MOSFET
  • RU1H100 - N-Channel Advanced Power MOSFET
  • RU1H100R - N-Channel Advanced Power MOSFET
  • RU1H130Q - N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
RU1HE3H N-Channel Advanced Power MOSFET MOSFET Features • 100V/3A, RDS (ON) =135mΩ (Typ.) @ VGS=10V RDS (ON) =150mΩ (Typ.) @ VGS=4.
Published: |