RU1HE3H Description
SOP-8 Applications Converters LED Backlight Ratings N-Channel MOSFET Symbol Parameter mon Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode.
RU1HE3H Key Features
- Super High Dense Cell Design
- Reliable and Rugged
- ESD Protected
- Lead Free and Green Available