RU1HE4H
RU1HE4H is N-Channel Advanced Power MOSFET manufactured by Ruichips.
Features
- 100V/4A, RDS (ON) =72mΩ (Typ.) @ VGS=10V RDS (ON) =80mΩ (Typ.) @ VGS=4.5V
- Super High Dense Cell Design
- Reliable and Rugged
- ESD Protected
- Lead Free and Green Available
Pin Description
SOP-8
Applications
- Power Management
- Converters.
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter mon Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
TA=25°C
②
RθJA
Continuous Drain Current(VGS=10V)
TA=25°C TA=70°C
Maximum Power Dissipation
TA=25°C TA=70°C
Thermal Resistance-Junction to Ambient
Rating
100 ±20 150 -55 to 150
①
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