RU1HE16L mosfet equivalent, n-channel advanced power mosfet.
* 100V/16A, RDS (ON) =70mΩ(Typ.)@VGS=10V RDS (ON) =85mΩ(Typ.)@VGS=4.5V
* Super High Dense Cell Design
* ESD protected
* Reliable and Rugged
* Lead Fre.
* Power Management.
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless O.
TO252
Applications
* Power Management.
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
.
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