RU1HE16L N-Channel Advanced Power MOSFET

Ruichips

RU1HE16L Description

RU1HE16L N-Channel Advanced Power MOSFET MOSFET .
TO252 Applications. Power Management.

RU1HE16L Features

* 100V/16A, RDS (ON) =70mΩ(Typ. )@VGS=10V RDS (ON) =85mΩ(Typ. )@VGS=4.5V
* Super High Dense Cell Design
* ESD protected
* Reliable and Rugged

RU1HE16L Applications

* Power Management. N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current M

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Datasheet Details

Part number: RU1HE16L
Manufacturer: Ruichips
File Size: 289.88 KB
Datasheet: RU1HE16L-Ruichips.pdf
Description: N-Channel Advanced Power MOSFET

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N-Channel Advanced Power MOSFET Ruichips

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