RU1HE3H mosfet equivalent, n-channel advanced power mosfet.
* 100V/3A, RDS (ON) =135mΩ (Typ.) @ VGS=10V RDS (ON) =150mΩ (Typ.) @ VGS=4.5V
* Super High Dense Cell Design
* Reliable and Rugged
* ESD Protected
* L.
* Converters
* LED Backlight
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=.
SOP-8
Applications
* Converters
* LED Backlight
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Tempe.
Image gallery
Download