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RU1HE4H Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU1HE4H
Manufacturer Ruichips
File Size 273.79 KB
Description N-Channel Advanced Power MOSFET
Download RU1HE4H Download (PDF)

General Description

SOP-8 Applications • Power Management • Converters.

Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=10V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating 100 ±20 150 -55 to 150 4 ① 16 4 3.3 2.5 1.6 50 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev.

B– MAR., 2011 www.ruich

Overview

RU1HE4H N-Channel Advanced Power MOSFET MOSFET.

Key Features

  • 100V/4A, RDS (ON) =72mΩ (Typ. ) @ VGS=10V RDS (ON) =80mΩ (Typ. ) @ VGS=4.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • ESD Protected.
  • Lead Free and Green Available Pin.

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