Datasheet4U Logo Datasheet4U.com

RU1HP55R - P-Channel Advanced Power MOSFET

Description

G D S TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300

Features

  • -100V/-55A, RDS (ON) =40mΩ(Typ. )@VGS=-10V.
  • Low On-Resistance.
  • Super High Dense Cell Design.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Devices Available (RoHS Compliant).

📥 Download Datasheet

Datasheet preview – RU1HP55R

Datasheet Details

Part number RU1HP55R
Manufacturer Ruichips
File Size 443.62 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet RU1HP55R Datasheet
Additional preview pages of the RU1HP55R datasheet.
Other Datasheets by Ruichips

Full PDF Text Transcription

Click to expand full text
RU1HP55R P-Channel Advanced Power MOSFET Features • -100V/-55A, RDS (ON) =40mΩ(Typ.
Published: |