RU1HP55R - P-Channel Advanced Power MOSFET

Description

G D S TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300

Features

-100V/-55A, RDS (ON) =40mΩ(Typ. )@VGS=-10V.
Low On-Resistance.
Super High Dense Cell Design.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

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Datasheet Details

Part number	RU1HP55R
Manufacturer	Ruichips
File Size	443.62 KB
Description	P-Channel Advanced Power MOSFET
Datasheet	RU1HP55R Datasheet
Additional preview pages of the RU1HP55R datasheet.

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Full PDF Text Transcription

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RU1HP55R P-Channel Advanced Power MOSFET Features • -100V/-55A, RDS (ON) =40mΩ(Typ.

Published: Apr 25, 2016 |