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RU1HP60R Datasheet P-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU1HP60R
Manufacturer Ruichips
File Size 315.06 KB
Description P-Channel Advanced Power MOSFET
Download RU1HP60R Download (PDF)

General Description

G DS TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S P-Channel MOSFET Rating Unit TC=25°C -100 ±25 175 -55 to 175 -60 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C -240 -60 -42 188 94 0.8 62.5 A A W °C/W °C/W 400 mJ Ruichips Semiconductor Co., Ltd Rev.

A– APR., 2013 1 www.ruichips.com RU1HP60R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU1HP60R Min.

Typ.

Overview

RU1HP60R P-Channel Advanced Power MOSFET.

Key Features

  • -100V/-60A, RDS (ON) =18mΩ(Typ. )@VGS=-10V.
  • Low On-Resistance.
  • Super High Dense Cell Design.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Devices Available (RoHS Compliant).

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