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RU1HP55R Datasheet P-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU1HP55R
Manufacturer Ruichips
File Size 443.62 KB
Description P-Channel Advanced Power MOSFET
Download RU1HP55R Download (PDF)

General Description

G D S TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS③ Avalanche Energy, Single Pulsed S P-Channel MOSFET Rating Unit TC=25°C -100 ±25 175 -55 to 175 -55 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C -220 -55 -39 176 88 0.85 62.5 A A W °C/W °C/W 400 mJ Ruichips Semiconductor Co., Ltd Rev.

A– MAR., 2013 1 www.ruichips.com RU1HP55R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU1HP55R Min.

Typ.

Overview

RU1HP55R P-Channel Advanced Power MOSFET.

Key Features

  • -100V/-55A, RDS (ON) =40mΩ(Typ. )@VGS=-10V.
  • Low On-Resistance.
  • Super High Dense Cell Design.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Devices Available (RoHS Compliant).

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