RU1HP60Q Description
G DS TO247 Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC -Junction to Case RJA -Junction to Ambient...
RU1HP60Q Key Features
- 100V/-60A, RDS (ON) =18mΩ(Typ.)@VGS=-10V
- Low On-Resistance
- Super High Dense Cell Design
- Fast Switching and Fully Avalanche Rated
- 100% avalanche tested