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RU1HP60Q Datasheet P-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU1HP60Q
Manufacturer Ruichips
File Size 683.56 KB
Description P-Channel Advanced Power MOSFET
Download RU1HP60Q Download (PDF)

General Description

G DS TO247 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS③ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev.

A– AUG., 2016 1 P-Channel MOSFET Rating Unit TC=25°C -100 ±25 175 -55 to 175 -60 V °C °C A TC=25°C TC=25°C TC=100

Key Features

  • -100V/-60A, RDS (ON) =18mΩ(Typ. )@VGS=-10V.
  • Low On-Resistance.
  • Super High Dense Cell Design.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.

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