RU1HP60R - P-Channel Advanced Power MOSFET

Description

G DS TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① ID

Features

-100V/-60A, RDS (ON) =18mΩ(Typ. )@VGS=-10V.
Low On-Resistance.
Super High Dense Cell Design.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

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Datasheet Details

Part number	RU1HP60R
Manufacturer	Ruichips
File Size	315.06 KB
Description	P-Channel Advanced Power MOSFET
Datasheet	RU1HP60R Datasheet
Additional preview pages of the RU1HP60R datasheet.

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Full PDF Text Transcription

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RU1HP60R P-Channel Advanced Power MOSFET Features • -100V/-60A, RDS (ON) =18mΩ(Typ.

Published: Apr 25, 2016 |