RU30120L Key Features
- Super High Dense Cell Design
- Ultra Low On-Resistance
- 100% avalanche tested
- Lead Free and Green Devices Available (RoHS pliant)
- Part: RU30120L
- Manufacturer: Ruichips
- Size: 273.90 KB
Related Ruichips Datasheets
| Part Number | Description |
|---|---|
| RU30120M | N-Channel Advanced Power MOSFET |
| RU30120R | N-Channel Advanced Power MOSFET |
| RU30120S | N-Channel Advanced Power MOSFET |
| RU30100L | N-Channel Advanced Power MOSFET |
| RU30100R | N-Channel Advanced Power MOSFET |
RU30120L Description
TO252 N-Channel MOSFET Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC -Junction to Case Drain-Source Avalanche...