RU30120L Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU30120L n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU30120L
Manufacturer	Ruichips
File Size	273.90 KB
Description	N-Channel Advanced Power MOSFET
Download	RU30120L Download (PDF)

General Description

TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– AUG., 2011 Rating 30 ±20 17

Overview

RU30120L N-Channel Advanced Power MOSFET MOSFET.

Key Features

30V/120A, RDS (ON) =2.5mΩ (Typ. ) @ VGS=10V RDS (ON) =3.3mΩ (Typ. ) @ VGS=4.5V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

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