RU30E20H mosfet equivalent, n-channel advanced power mosfet.
* 30V/20A, RDS (ON) =4.6mΩ(Typ.)@VGS=10V RDS (ON) =5.8mΩ(Typ.)@VGS=4.5V RDS (ON) =15mΩ(Typ.)@VGS=2.5V
* Low On-Resistance
* ESD Protected
* Super High Den.
* Switching Application Systems
Pin Description
D D D D
G S S pin1 S SOP-8
D
G
Absolute Maximum Ratings
Symbol
P.
D D D D
G S S pin1 S SOP-8
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
IS
Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode .
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