RU30E20H Description
D D D D G S S pin1 S SOP-8 D G Ratings Symbol Parameter mon Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=4.5V) PD Maximum Power Dissipation RJC -Junction to Case RJA③...
RU30E20H Key Features
- 30V/20A, RDS (ON) =4.6mΩ(Typ.)@VGS=10V RDS (ON) =5.8mΩ(Typ.)@VGS=4.5V RDS (ON) =15mΩ(Typ.)@VGS=2.5V
- Low On-Resistance
- ESD Protected
- Super High Dense Cell Design
- Reliable and Rugged
- Lead Free and Green Devices Available (RoHS pliant)