RU65110R Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU65110R n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU65110R
Manufacturer	Ruichips
File Size	331.81 KB
Description	N-Channel Advanced Power MOSFET
Download	RU65110R Download (PDF)

General Description

TO-220 Applications • DC-DC Converters and Off-line UPS • Switching Applications N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright Ruichips Semiconductor Co., Ltd Rev.

A– MAY., 2012 Rating 65

Overview

RU65110R N-Channel Advanced Power MOSFET.

Key Features

65V/110A, RDS (ON) =6mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

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