Datasheet4U Logo Datasheet4U.com

RU8590R - N-Channel Advanced Power MOSFET

Description

GD S TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① ID

Features

  • 85V/90A, RDS (ON) =5.8mΩ(Typ. )@VGS=10V.
  • Ultra Low On-Resistance.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Devices Available (RoHS Compliant).

📥 Download Datasheet

Datasheet preview – RU8590R

Datasheet Details

Part number RU8590R
Manufacturer Ruichips
File Size 300.48 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU8590R Datasheet
Additional preview pages of the RU8590R datasheet.

📁 Similar Datasheet

Other Datasheets by Ruichips
  • RU8590S - N-Channel Advanced Power MOSFET
  • RU80100R - N-Channel Advanced Power MOSFET
  • RU80100S - N-Channel Advanced Power MOSFET
  • RU80190R - N-Channel Advanced Power MOSFET
  • RU8048R - N-Channel Advanced Power MOSFET
  • RU8048S - N-Channel Advanced Power MOSFET
  • RU8080R - N-Channel Advanced Power MOSFET
  • RU8080S - N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
RU8590R N-Channel Advanced Power MOSFET Features • 85V/90A, RDS (ON) =5.8mΩ(Typ.
Published: |