RUH1H100R Description
GDS TO220 D G Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC -Junction to Case RJA -Junction to Ambient...
RUH1H100R Key Features
- 100V/100A, RDS (ON) =5.2mΩ(Typ.)@VGS=10V
- Advanced HEFET® Technology
- Ultra Low On-Resistance
- Excellent QgxRDS(on) Product
- 100% avalanche tested
- 175°C Operating Temperature
- Lead Free and Green Devices Available (RoHS pliant)