RUH1H100R mosfet equivalent, n-channel advanced power mosfet.
* 100V/100A, RDS (ON) =5.2mΩ(Typ.)@VGS=10V
* Advanced HEFET® Technology
* Ultra Low On-Resistance
* Excellent QgxRDS(on) Product
* 100% avalanche test.
* Motor Drives
* Uninterruptible Power Supplies
* Synchronus Rectification in DC/DC and AC/DC Converters
Pi.
GDS
TO220
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
IS
Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous For.
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