RUH1H80M mosfet equivalent, n-channel advanced power mosfet.
* 100V/80A, RDS (ON) =8.5mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VGS=4.5V
* Ultra Low On-Resistance
* Fast Switching Speed
* 100% avalanche tested
* Lea.
* LED backlighting
* On board power for server
* Synchronous rectification
Pin Description
D D DD
SSS G
P.
D D DD
SSS G
PIN1
PDFN5060
D
PIN1
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
IS
Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Ra.
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