RUH1H80M Description
D D DD SSS G PIN1 PDFN5060 D PIN1 G Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current.
RUH1H80M Key Features
- 100V/80A, RDS (ON) =8.5mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VGS=4.5V
- Ultra Low On-Resistance
- Fast Switching Speed
- 100% avalanche tested
- Lead Free and Green Devices Available (RoHS pliant)