RUH1H9H Description
D D D D G S S pin1 S SOP-8 D G Ratings Symbol Parameter mon Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC -Junction to Case RJA③...
RUH1H9H Key Features
- 100V/9A, RDS (ON) =17mΩ(Typ.)@VGS=10V
- Advanced HEFET® Technology
- Ultra Low On-Resistance
- Excellent QgxRDS(on) Product
- Optimized for fast-switching
RUH1H9H Applications
- Lead Free and Green Devices Available (RoHS pliant)