RUH1H9H mosfet equivalent, n-channel advanced power mosfet.
* 100V/9A, RDS (ON) =17mΩ(Typ.)@VGS=10V
* Advanced HEFET® Technology
* Ultra Low On-Resistance
* Excellent QgxRDS(on) Product
* Optimized for fast-swi.
* Lead Free and Green Devices Available (RoHS Compliant)
Applications
* Uninterruptible Power Supplies
* Syn.
D D D D
G S S pin1 S SOP-8
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS .
Image gallery