SW8N60 Key Features
- High ruggedness
- RDS(ON) (Max 1.3 Ω)@VGS=10V
- Gate Charge (Typ 38nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Part: SW8N60
- Manufacturer: SAMWIN
- Size: 605.79 KB
Related SAMWIN Datasheets
| Part Number | Description |
|---|---|
| SW8N60D | N-channel MOSFET |
| SW8N65D | N-channel MOSFET |
| SW8N65DB | N-channel MOSFET |
| SW8N65K | N-channel MOSFET |
| SW830 | N-Channel MOSFET |
SW8N60 Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.