Datasheet Summary
SAMWIN
TO-251 TO-252 TO-220F
SW4N60B
N-channel I-PAK/D-PAK/TO-220F MOSFET
BVDSS : 600V ID
Features
- High ruggedness
- RDS(ON) (Max 2.5 Ω)@VGS=10V
- Gate Charge (Typ 11nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
: 4A
RDS(ON) : 2.5Ω
2 1 3 2 3 1 2 2 3 1 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
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