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SW6N90 - N-channel TO-262 MOSFET

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Key Features

  • High ruggedness.
  • RDS(ON) (Max 2.3 Ω)@VGS=10V.
  • Gate Charge (Typical 40nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 1 2 BVDSS : 900V ID : 6.0A RDS(ON) : 2.3ohm 2 3 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW6N90
Manufacturer SEMIPOWER
File Size 415.13 KB
Description N-channel TO-262 MOSFET
Datasheet download datasheet SW6N90 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SAMWIN SW6N90 N-channel TO-262 MOSFET TO-262 Features ■ High ruggedness ■ RDS(ON) (Max 2.3 Ω)@VGS=10V ■ Gate Charge (Typical 40nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1 2 BVDSS : 900V ID : 6.0A RDS(ON) : 2.3ohm 2 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.