STC6301D Description
The STC6301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as power management, where high-side switching, low in-line power loss and resistance to...
STC6301D Key Features
- 60V/8.0A, RDS(ON) = 37mR @VGS = 10V
- 60V/5.0A, RDS(ON) = 28mΩ @VGS = 4.5V P-Channel
- 60V/-5.0A, RDS(ON) = 46mΩ @VGS = -10V
- 60V/-3.0A, RDS(ON)= 65mΩ @VGS = - 4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- TO252-4L package Y ∶Year A ∶Date code B/C：Process Code X ：Package Code STANSON TECHNOLOGY 120 Bentley Square