Datasheet Summary
plementary Dual Enhancement Mode MOSFET
8.5A for N Channel / -7.2A for P Channl
DESCRIPTION STC4516 is the plementary enhancement mode power field effect transistor using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION SOP-8 Top View FEATURE P Channel z -30V/-7.2A, RDS(ON) = 22m-ohm (Typ.) @VGS =-10V z -30V/-5.6A, RDS(ON) = 40m-ohm @VGS =-4.5V N Channel z 30V/8.5A, RDS(ON) = 10m-ohm @VGS =10V z 30V/7.8A, RDS(ON) = 16m-ohm @VGS =4.5V z Super high density cell design for extremely low RDS(ON) z SOP-8 package design
8 D1
7 D1
6 D2
5 D2
STC5416 YA
1 S1
2 G1
3 S2
4 G2...