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STC4516 - Complementary Dual Enhancement Mode MOSFET

General Description

STC4516 is the complementary enhancement mode power field effect transistor using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number STC4516
Manufacturer Stanson
File Size 1.02 MB
Description Complementary Dual Enhancement Mode MOSFET
Datasheet download datasheet STC4516 Datasheet

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Complementary Dual Enhancement Mode MOSFET STC4516 8.5A for N Channel / -7.2A for P Channl DESCRIPTION STC4516 is the complementary enhancement mode power field effect transistor using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION SOP-8 Top View FEATURE P Channel z -30V/-7.2A, RDS(ON) = 22m-ohm (Typ.) @VGS =-10V z -30V/-5.6A, RDS(ON) = 40m-ohm @VGS =-4.5V N Channel z 30V/8.5A, RDS(ON) = 10m-ohm @VGS =10V z 30V/7.8A, RDS(ON) = 16m-ohm @VGS =4.