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STC4516 Datasheet PDF

Stanson STC4516

STC4516 is the complementary enhancement mode power field effect transistor using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
Part No. STC4516
Datasheet STC4516 Download
Manufacturer
Stanson
Description Complementary Dual Enhancement Mode MOSFET
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STC4516 datasheet page 1 preview

DESCRIPTION

PIN CONFIGURATION SOP-8 Top View FEATURE P Channel z -30V/-7.2A, RDS(ON) = 22m-ohm (Typ.) @VGS =-10V z -30V/-5.6A, RDS(ON) = 40m-ohm @VGS =-4.5V N Channel z 30V/8.5A, RDS(ON) = 10m-ohm @VGS =10V z 30V/7.8A, RDS(ON) = 16m-ohm @VGS =4.5V z Super high density cell design for extremely low RDS(ON) z SOP-8 package design 8 D1 7 D1 6 D2 5 D2 STC5416 YA 1 S1 2 G1 3 S2 4 G2 N-Channel MOSFET P-Channel MOSFET Y: Year Code A: Process Code ORDERING INFORMATION Part Number STC4516S8RG STC4516S8TG Package SOP-8 SOP-8 Part Marking STC4516 STC4516 ※ Process Code : A ~ Z ; a ~ z ※ STC4516S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free ※ STC4516S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA STC4516 2008 V1 Free Datasheet Complementary Dual Enhancement Mode MOSFET STC4516 8.5A for N Channel / -7.2A for P Channl ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ unless otherwise noted ) P-Channel Parameter Drain-Source Voltage Gate-Source Voltage...
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