STC4516 - Complementary Dual Enhancement Mode MOSFET

Datasheet Summary

Description

STC4516 is the complementary enhancement mode power field effect transistor using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Stanson

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Datasheet Details

Part number	STC4516
Manufacturer	Stanson
File Size	1.02 MB
Description	Complementary Dual Enhancement Mode MOSFET
Datasheet	STC4516 Datasheet
Additional preview pages of the STC4516 datasheet.

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Complementary Dual Enhancement Mode MOSFET STC4516 8.5A for N Channel / -7.2A for P Channl DESCRIPTION STC4516 is the complementary enhancement mode power field effect transistor using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION SOP-8 Top View FEATURE P Channel z -30V/-7.2A, RDS(ON) = 22m-ohm (Typ.) @VGS =-10V z -30V/-5.6A, RDS(ON) = 40m-ohm @VGS =-4.5V N Channel z 30V/8.5A, RDS(ON) = 10m-ohm @VGS =10V z 30V/7.8A, RDS(ON) = 16m-ohm @VGS =4.

Published: Aug 29, 2013 |