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STC4614 - 10A N&P Pair Enhancement Mode MOSFET

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Description

The STC4614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

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Datasheet Details

Part number STC4614
Manufacturer STANSON
File Size 489.11 KB
Description 10A N&P Pair Enhancement Mode MOSFET
Datasheet download datasheet STC4614 Datasheet
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STC4614 N&P Pair Enhancement Mode MOSFET 10A / -10A DESCRIPTION The STC4614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits, where high-side switching, low in-line power loss and resistance to transient are needed. PIN CONFIGURATION SOP-8 PART MARKING FEATURE N-Channel � 40V/10A, RDS(ON) = 24mΩ (Typ.) @VGS = 10V � 40V/8.0A, RDS(ON) = 30mΩ @VGS = 4.5V � 40V/6.0A, RDS(ON) = 36mΩ @VGS = 2.5V P-Channel � -40V/-10A, RDS(ON) = 38mΩ(Typ.) @VGS = -10V � -40V/-8.
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