Datasheet Summary
N&P Pair Enhancement Mode MOSFET
23.0A / -18.0A
DESCRIPTION
The STC6301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as power management, where high-side switching, low in-line power loss and resistance to transient are needed.
PIN CONFIGURATION TO252-4L
D1 / D2
PART MARKING
FEATURE
N-Channel l 60V/8.0A, RDS(ON) = 37mR
@VGS = 10V l 60V/5.0A, RDS(ON) = 28mΩ
@VGS = 4.5V
P-Channel l -60V/-5.0A, RDS(ON) = 46mΩ
@VGS = -10V...