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STC6301D - N&P-Channel Enhancement Mode MOSFET

General Description

The STC6301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

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Datasheet Details

Part number STC6301D
Manufacturer STANSON
File Size 913.23 KB
Description N&P-Channel Enhancement Mode MOSFET
Datasheet download datasheet STC6301D Datasheet

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Full PDF Text Transcription (Reference)

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STC6301D N&P Pair Enhancement Mode MOSFET 23.0A / -18.0A DESCRIPTION The STC6301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as power management, where high-side switching, low in-line power loss and resistance to transient are needed. PIN CONFIGURATION TO252-4L D1 / D2 PART MARKING FEATURE N-Channel l 60V/8.0A, RDS(ON) = 37mR @VGS = 10V l 60V/5.0A, RDS(ON) = 28mΩ @VGS = 4.5V P-Channel l -60V/-5.0A, RDS(ON) = 46mΩ @VGS = -10V l -60V/-3.0A, RDS(ON)= 65mΩ @VGS = - 4.