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STC4301D - N&P-Channel Enhancement Mode MOSFET

General Description

The STC4301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

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Datasheet Details

Part number STC4301D
Manufacturer STANSON
File Size 2.03 MB
Description N&P-Channel Enhancement Mode MOSFET
Datasheet download datasheet STC4301D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STC4301D N&P Pair Enhancement Mode MOSFET 23.0A / -20.0A DESCRIPTION The STC4301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as power management, where high-side switching, low in-line power loss and resistance to transient are needed. PIN CONFIGURATION TO252-4L D1 / D2 PART MARKING FEATURE N-Channel l 40V/12.0A, RDS(ON) = 25mR @VGS = 10V l 40V/10.0A, RDS(ON) = 32mΩ @VGS = 4.5V P-Channel l -40V/-8.0A, RDS(ON) = 40mΩ @VGS = -10V l -40V/-4.0A, RDS(ON)= 65mΩ @VGS = - 4.