STC4301D Datasheet PDF

STANSON STC4301D

The STC4301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as power management, where high-side switching, low in-line power loss and resistance to transient are needed.

Part No.	STC4301D
Datasheet	STC4301D Download
Manufacturer	STANSON
Description	N&P-Channel Enhancement Mode MOSFET
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DESCRIPTION

PIN CONFIGURATION TO252-4L D1 / D2 PART MARKING FEATURE N-Channel l 40V/12.0A, RDS(ON) = 25mR @VGS = 10V l 40V/10.0A, RDS(ON) = 32mΩ @VGS = 4.5V P-Channel l -40V/-8.0A, RDS(ON) = 40mΩ @VGS = -10V l -40V/-4.0A, RDS(ON)= 65mΩ @VGS = - 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO252-4L package Y ∶Year A ∶Date code B/C：Process Code X ：Package Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2007, Stanson Corp. STC4301D 2017. V1 STC4301D N&P Pair Enhancement Mode MOSFET 23.0A / -20.0A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDSS VGSS Typical N P 40 -40 ±20 ±20 Unit V V Continuous Drain Current TA=25℃ TA=70℃ ID 23.0 18.0 -20.0 -16.0 A Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ Operation Junction Temperature Storgae Temperature Range Ther...