STN210D Description
80.0A STN210D uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. (D-PAK) TO-252 TO-251 PART MARKING.
STN210D Key Features
- 30V/20A, RDS(ON) = 3mΩ @VGS = 10V
- 30V/20A, RDS(ON) = 4mΩ @VGS = 4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- TO-252,TO-251 package design YYear Code ADate Code BProcess Code STANSON TECHNOLOGY 120 Bentley Square