STN4392 Datasheet | STANSON

N Channel Enhancement Mode MOSFET 13A DESCRIPTION STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE - 30V/13A, RDS(ON) = 8mΩ (Typ.) @VGS = 10V - 30V/10A, RDS(ON) = 12mΩ @VGS = 4.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability - SOP-8 package...