STN4260 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density.
This high density process is especially tailored to minimize on-state resistance.
| Part number | STN4260 |
|---|---|
| Manufacturer | STANSON |
| File Size | 727.33 KB |
| Description | 18A N-Channel Enhancement Mode MOSFET |
| Datasheet |
 STN4260 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| STN4102 | MOSFET | Stanson Technology |
| STN410D | MOSFET | Stanson Technology |
| STN4110 | 40A N-Channel Enhancement Mode MOSFET | Stanson Technology |
| STN4130 | N-Channel Enhancement Mode MOSFET | Stanson Technology |
| STN4186D | MOSFET | Stanson Technology |
| Part Number | Description |
|---|---|
| STN4346 | 6.8A N-Channel Enhancement Mode MOSFET |
| STN4392 | N-Channel Enhancement Mode MOSFET |
| STN442D | N-Channel Enhancement Mode MOSFET |
| STN4438 | N-Channel Enhancement Mode MOSFET |
| STN444DN | N-Channel Enhancement Mode MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
