STN4260 Datasheet | STANSON

N Channel Enhancement Mode MOSFET 18A DESCRIPTION STN4260 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE l 60V/10A, RDS(ON) = 11.5mΩ (Typ.) @VGS = 10V l 60V/8A, RDS(ON) = 12.5mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOP-8 package design PART MARKING Y:...