STN2610D
STN2610D is N-Channel Enhancement Mode MOSFET manufactured by STANSON.
N Channel Enhancement Mode MOSFET
50.0A
DESCRIPTION
STN2610D is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications.
PIN CONFIGURATION TO-252
TO-251
FEATURE l 60V/10.0A, RDS(ON) = 10mΩ (Typ.) @VGS = 10V l 60V/8.0A, RDS(ON) = 12mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO-252, TO-251 package design
PART MARKING
Y： Year Code A：Process Code B：Process Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech.
Copyright © 2009, Stanson Corp.
STN2610D 2009. V1
N Channel Enhancement Mode MOSFET
50.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Typical
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
TA=25℃ TA=70℃
VGSS ID
±20
50.0 28.0
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃...
