STN210D - N-Channel Enhancement Mode MOSFET

STANSON

General Description

STN210D uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance.

It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

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STN210D n-channel enhancement mode mosfet by STANSON - Datasheet Preview

Datasheet Details

Part number	STN210D
Manufacturer	STANSON
File Size	1.03 MB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	STN210D Datasheet

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STN210D N Channel Enhancement Mode MOSFET DESCRIPTION 80.0A STN210D uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) TO-252 TO-251 PART MARKING FEATURE l 30V/20A, RDS(ON) = 3mΩ @VGS = 10V l 30V/20A, RDS(ON) = 4mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO-252,TO-251 package design YYear Code ADate Code BProcess Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp.