Datasheet Details
| Part number | STN210D |
|---|---|
| Manufacturer | STANSON |
| File Size | 1.03 MB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet |
 STN210D Datasheet
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| Part number | STN210D |
|---|---|
| Manufacturer | STANSON |
| File Size | 1.03 MB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet |
STN210D Datasheet
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80.0A STN210D uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance.It has been optimized for low gate charge, low RDS(ON) and fast switching speed.PIN CONFIGURATION (D-PAK) TO-252 TO-251 PART MARKING FEATURE l 30V/20A, RDS(ON) = 3mΩ @VGS = 10V l 30V/20A, RDS(ON) = 4mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC
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