STANSON STN210D
N-Channel Enhancement Mode MOSFET
| Part No. | STN210D |
|---|---|
| Datasheet | STN210D Download |
| Manufacturer |  STANSON |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
80.0A STN210D uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) TO-252 TO-251 PART MARKING FEATURE l 30V/20A, RDS(ON) = 3mΩ @VGS = 10V l 30V/20A, RDS(ON) = 4mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO-252,TO-251 package design Y Year Code A Date Code B Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2009, Stanson Corp. ST210D 2016 V1 STN210D N Channel Enhancement Mode MOSFET 80.0A ABSOULTEMAXIMUM RATINGS
(Ta = 25 Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage Continuous Drain Current (TJ=150 ) Pulsed Drain Current VGSS ±20 V TA=25 ID TA=100 80 55 A IDM 360 A Continuous Source Current (Diode Conduct...
