STN456DN Description
STN456DN uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. POWER PACK 5x6 (1212-8L) DD.
STN456DN Key Features
- 30V/30A, RDS(ON) = 4.0mΩ（Typ.） @VGS = 10V
- 30V/15A, RDS(ON) = 5.8mΩ @VGS = 4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- PPAK5x6 (1212-8L) package design S S SG Y：Year Code A：Date Code B：Package Code C：Process Code STANSON TECHNO