11N6F Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(1, 2, 3) 1234 AM15810v1 Order code STL11N6F7 Marking 11N6F Table 1: Device summary Package PowerFLAT™ 3.3x3.3 Packing Tape and reel November 2015 DocID028134 Rev 2 This is...
11N6F Key Features
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness