11N6F
11N6F is N-channel Power MOSFET manufactured by STMicroelectronics.
STL11N6F7
N-channel 60 V, 10 mΩ typ., 11 A STrip FET™ F7 Power MOSFET in a Power FLAT™ 3.3x3.3 package
- production data
1 2 3 4
Power FLAT™ 3.3x3.3
Figure 1: Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Features
Order code STL11N6F7
VDS 60 V
RDS(on) max. 12 mΩ
ID 11 A
Features
- Among the lowest RDS(on) on the market
- Excellent figure of merit (Fo M)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Applications
- Switching applications
Description
This N-channel Power MOSFET utilizes STrip FET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
S(1, 2, 3)
AM15810v1
Order code STL11N6F7
Marking 11N6F
Table 1: Device summary Package
Power FLAT™ 3.3x3.3
Packing Tape and...
