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Unisonic Technologies

11N60K-MT Datasheet Preview

11N60K-MT Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
11N60K-MT
Preliminary
11A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 11N60K-MT is an N-channel enhancement mode
power MOSFET. It uses UTC advanced planar stripe, DMOS
technology to provide customers perfect switching performance,
minimal on-state resistance. It also can withstand high energy pulse
in the avalanche and commutation mode.
The UTC 11N60K-MT is universally applied in electronic lamp
ballasts based on half bridge topology, high efficiency switched
mode power supplies, active power factor correction, etc.
FEATURES
* RDS(ON) < 1.00 @ VGS = 10 V, ID = 5.5 A
* Fast Switching
* With 100% Avalanche Tested
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
11N60KL-TF2-T
11N60KG-TF2-T
TO-220F2
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GD S
Packing
Tube
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-A99.c




Unisonic Technologies

11N60K-MT Datasheet Preview

11N60K-MT Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

11N60K-MT
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
600 V
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 3)
TC=25°C
TC=100°C
VGSS
ID
IDM
±30
11 (Note 2)
7 (Note 2)
44 (Note 2)
V
A
A
A
Single Pulsed Avalanche Energy(Note 4)
Peak Diode Recovery dv/dt (Note 5)
EAS
dv/dt
440 mJ
4.5 V/ns
Power Dissipation
Derate above 25°C
PD
48 W
0.38 W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating : Pulse width limited by maximum junction temperature
4. L=7.27mH, IAS=11A, VDD= 50V, RG=25, Starting TJ=25°C
5. ISD 11A, di/dt 200A/μs, VDD BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
2.58
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-A99.c


Part Number 11N60K-MT
Description N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
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