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11N60K-MT - N-CHANNEL POWER MOSFET

Description

The UTC 11N60K-MT is an N-channel enhancement mode power MOSFET.

It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance.

It also can withstand high energy pulse in the avalanche and commutation mode.

Features

  • S.
  • RDS(ON) < 1.00 Ω @ VGS = 10 V, ID = 5.5 A.
  • Fast Switching.
  • With 100% Avalanche Tested.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 11N60K-MT Preliminary 11A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N60K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 11N60K-MT is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc.  FEATURES * RDS(ON) < 1.00 Ω @ VGS = 10 V, ID = 5.5 A * Fast Switching * With 100% Avalanche Tested  SYMBOL 2.Drain Power MOSFET 1.Gate 3.
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