AM1214-325 transistors equivalent, l-band radar applications rf & microwave transistors.
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OV.
The AM1214-325 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications. This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstan.
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